Low-Temperature Oxidation of Silicon in H_2O_2 Ambient by UV Irradiation (Short Note)
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概要
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Thermal oxidation of silicon can be markedly enhanced by UV irradiation in H_2O_2 ambient. The typical thickness of the oxide was about 3.3nm for oxidation at 350℃ for 60min. The OH obtained by decomposing hydrogen peroxide using UV light is an oxidizing species. Since OH is highly reactive, the low-temperature oxidation of silicon becomes possible. The dynamics of the oxidation follows the linear rule, and the activation energy is 0.59eV. [DOI: 10.1143/JJAP.41.1324]
- 社団法人応用物理学会の論文
- 2002-03-15
著者
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Ishikawa Y
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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Ishikawa Yutaka
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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