Low-Temperature Oxidation of Silicon in Dry O_2 Ambient by UV-lrradiation

スポンサーリンク

概要

• 論文の詳細を見る

• The mechanism of thermal oxidation of silicon in dry O_2 ambient with UV-irradiation has been discussed. The dependence of SiO_2 thickness on oxidation time follows the model proposed by Cabrera and Mott for relatively short oxidation time. Such dependence follows the model by Deal and Grove for longer time. The main oxidizing species is ozone (O_3) or some other reactive species generated from O_3 at lower temperatures and this gradually changes to O_2 with an increase in temperature. The SiO_2 film formed at 5OO℃ for 1 h by the present technique has a similar quality to that of SiO_2 formed at high temperatures in dry O_2 ambient, as eva1uated from Fourier Transform-Infrared (FT-IR), Auger Electron Spectroscopy (AES) and Capacitance-Voltage (C-V) characteristics.

• 社団法人応用物理学会の論文
• 1992-04-15

著者

• Ishikawa Y

  Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information

• Ishikawa Y

  Dowa Mining Co. Ltd. Tokyo

• Ishikawa Y

  Hokkaido Univ. Sapporo Jpn

• Ishikawa Yutaka

  Department Of Electrical And Electronics Engineering Nippon Institute Of Technology

• Nakamichi Ichiro

  Department Of Electrical And Electronics Engineering Nippon Institute Of Technology

• Nakamichi Ichiro

  Department Of Electro And Electronics Engineering Nippon Institute Of Technology

• Nakamichi I

  Department Of Electrical And Electronics Engineering Nippon Institute Of Technology

• SHIBAMOTO Tsuyoshi

  Department of Electrical and Electronics Engineering, Nippon Institute of Technology

• Shibamoto Tsuyoshi

  Department Of Electrical And Electronics Engineering Nippon Institute Of Technology

関連論文

• ULTRASONIC COURTSHIP SIGNAL IN A MOTH, OSTRINIA FURNACALIS I. FEMALE HEARING AND MATING BEHAVIOR(Behavior Biology and Ecology,Abstracts of papers presented at the 76^ Annual Meeting of the Zoological Society of Japan)
• Fowler-Nordheim Current Oscillations in Si(111)/SiO_2/Twisted-Si(111) Tunneling Structures
• Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers
• Charge polarization effect on single-hole-characteristics in a two-dimensional Si multidot structure
• Ambipolar Coulomb Blockade Characteristics in a Two-Dimensional Si Multidot Device
• Resonant tunneling characteristics in SiO₂/Si double-barrier structures in a wide range of applied voltage
• Formation of Au and AuSi_x-Pyramids in Separation by Implanted Oxygen Wafers with Si Pillars in SiO_2 Layer
• In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2×4) GaAs Surfaces
• In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-Doped MBE-Grown (2x4) GaAs Surfaces
• Single-photon-induced random telegraph signal in a two-dimensional multiple-tunnel-junction array
• Thermally-induced formation of Si wire array on an ultrathin (111) silicon-on-insulator substrate
• Enhanced-Nitridation of Silicon by UV-Irradiation
• Oxidation-Retarded Diffusion of Bismuth in Silicon
• In-Situ Scanning Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs(001)-(2×4) Surface
• In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs(001)-(2x4) Surface
• Missing-Dimer Structures and Their Kink Defects on Molecular Beam Epitaxially Grown (2×4) Reconstructed (001) InP and GaAs Surfaces Studied by Ultrahigh-Vacuum Scanning Tunneling Microscopy
• Missing-Dimer Structures and Their Kink Defects on MBE-Grown (2x4) Reconstructed (001)Inp Surfaces Studied by UHV Scanning Tunneling Microscope
• Estimation of Cytoplasmic Free Mg^+ Levels and Phosphorylation Potentials in Mung Bean Root Tips by In Vivo ^P NMR Spectroscopy
• In Situ Transmission Electron Microscopy Observation of Au-Si Interface Reaction
• Usefulness of mitochondrial COII gene sequences in examining phylogenetic relationships in the Asian corn borer, Ostrinia furnacalis, and allied species (Lepidoptera : Pyralidae)
• Etching of Nondiamond Carbon in Diamond Thin Films Synthesized by Hot-Filament Chemical Vapor Deposition with Ultraviolet Irradiation
• Effect of Oxidation due to Ultraviolet-Light Irradiation on Diamond Thin Films Synthesized by Hot-Filament Chemical Vapor Deposition
• The Effect of Ultraviolet Irradiation on Electroless Plating Process of Nickel
• The Effect of Ultraviolet Irradiation on Eleclro and Electroless Platings of Nickel
• Creation of Highly Oriented Freestanding Carbon Nanotube Film by Sublimating Decomposition of Silicon Carbide Film
• Epitaxial Growth of 3C-SiC on Thin Silicon-on-Insulator Substrate by Chemical Vapor Deposition Using Alternating Gas Supply
• Acoustic Properties of Lens Materials for Ultrasonic Probes
• Sm-Substiuted Lead Titanate Ceramics for High Frequency Ultrasonic Probes : V: PIZOELECTRIC VIBRATOR
• Differences in timing of the emergence of the overwintering generation between rice and water-oats populations of the striped stem borer moth, Chilo suppressalis (Lepidoptera: Crambidae)
• Morphometric differences between rice and water-oats population of the striped stem borer moth, Chilo suppressalis (Lepidoptera: Crambidae)
• New records of Ostrinia ovalipennis (Lepidoptera: Crambidae) from Hokkaido, and morphometric analyses for species identification and geographic variation
• Allometry of male genitalia in a lepidopteran species, Ostrinia latipennis (Lepidoptera: Crambidae)
• Mendelian Inheritance of Melanism in Pupae and Adults of the Adzuki Bean Borer, Ostrinia scapulalis (Lepidoptera : Crambidae)(Physiology, Biochemistry, Development and Genetics)
• The Effect of Thermal Oxidation of Silicon on Boron Diffusion in Extrinsic Conditions
• Concentration Dependence of the Diffusion Coefficient of Boron in Silicon
• Effect of Cd Reservoir on the Composition (y) of Cd_Zn_yTe Epilayers Grown by Hot Wall Epitaxy
• Growth and Evaluation of Cd_Zn_yTe Epilayers on (100) GaAs Substrates by Hot Wall Epitaxy
• Growth Kinetics of Hg_Cd_xTe Epilayers by Semiclosed Open-Tube Isothermal Vapor Phase Epitaxy
• Effect of CdTe Layer Thickness on Hg_Cd_xTe Epilayer Growth by Isothermal Vapor Phase Epitaxy Using (100) CdTe/GaAs Substrates and Void Formation at the Interface
• Growth of Single-Walled Carbon Nanotubes below 450 °C Using Cobalt Catalyst
• Thermal Agglomeration of Ultrathin Si Layer on Buried SiO_2
• Thermally-Induced Structural Changes of Ultrathin Silicon-on-Insulator Structure
• Simulation of Visible Light Induced Effects in a Tunnel Junction Array for Photonic Device Applications
• Analysis of Device Performance by Quasi Three-Dimensional Simulation for Thin Film Polycrystalline Silicon Solar Cells with Columnar Structure : Semiconductors
• Optimum Designing of Single Crystalline Silicon Thin Film Solar Cells with Graded Active Layer : Semiconductors
• Resonant Tunneling Effect in Si/SiO_2 Double Barrier Structure
• Enhanced Thermal Oxidation of Silicon in Steam Ambient by UV-Irradiation
• Low-Temperature Oxidation of Silicon in Dry O_2 Ambient by UV-lrradiation
• Low-Temperature Oxidation of Silicon in H_2O_2 Ambient by UV Irradiation (Short Note)
• Synthesis of Multiwalled Carbon Nanotubes at Temperatures below 300°C by Hot-Filament Assisted Chemical Vapor Deposition
• Diffusion of Phosphorus and Boron into Silicon at Low Temperatures by Heating with Light Irradiation
• Low-Temperature Thermal Oxidation of Silicon in N_2O by UV-Irradiation
• The Enhanced Electroplating of Nickel by UV-Irradiation before Plating Step
• Solutions of Simultaneous Equations for Oxidation Enhanced and Retarded Diffusions and Oxidation Stacking Fault in Silicon
• The Enhanced and Suppressed Electroless Plating of Copper by UV-Irradiation : Chemistry (incl. physical process)
• Growth of Single-Walled Carbon Nanotubes by Hot-Filament Assisted Chemical Vapor Deposition below 500 °C
• Effect of Tungsten on Synthesis of Multiwalled Carbon Nanotubes Using Cobalt as Catalyst
• Enhanced Thermal Oxidation of Silicon by UV-Irradiation
• The Enhanced Diffusion of Low-Concentration Phosphorus, Arsenic and Boron in Silicon during IR-Heating
• Thermal Oxidation of Antimony-Doped Silicon (Short Note)
• Erratum: "Synthesis of Multiwalled Carbon Nanotubes at Temperatures below 300 °C by Hot-Filament Assisted Chemical Vapor Deposition"
• The Diffusion of Bismuth in Silicon

もっと見る 閉じる

スポンサーリンク