Low-Temperature Thermal Oxidation of Silicon in N_2O by UV-Irradiation
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概要
- 論文の詳細を見る
A new thermal oxidation method using UV-irradiation has been proposed. Silicon dioxide of 3.5-4.0 nm thickness can be formed in 0.5 h at 200-500℃ under N_2O flow with UV-irradiation. Oxide formed by the present method is determined to be silicon dioxide. The fixed charge density at the Si/SiO_2 interface is relatively low for 500℃ oxidation. It is estimated to be about 2 × 10^<11> cm^<-2> without any thermal annealing.
- 社団法人応用物理学会の論文
- 1989-08-20
著者
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Ishikawa Yutaka
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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Nakamichi Ichiro
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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Takagi Yukio
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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ISHIKAWA Yutaka
Department of Electrical and Electronics Engineering, Nippon Institute of Technology
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