The Diffusion of Bismuth in Silicon
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概要
- 論文の詳細を見る
The diffusion of bismuth into silicon from a spin-on source has been investigated at a temperature range of 1050–1200°C. The concentration profile of bismuth agrees with the complementary error function, and its diffusion coefficient shows a value similar to the values of phosphorus and boron. Its activation energy is estimated to be 2.50 eV. That is much smaller than the values of phosphorus, boron and arsenic.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-07-20
著者
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Ishikawa Yutaka
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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Nakamichi Ichiro
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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Nakamichi Ichiro
Department of Electrical and Electronics Engineering, Nippon Institute of Technology, Miyashiro, Minamisaitama, Saitama 345
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Ishikawa Yutaka
Department of Electrical and Electronics Engineering, Nippon Institute of Technology, Miyashiro, Minamisaitama, Saitama 345
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Yazaki Kazuyuki
Department of Electrical and Electronics Engineering, Nippon Institute of Technology, Miyashiro, Minamisaitama, Saitama 345
関連論文
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- Effect of Oxidation due to Ultraviolet-Light Irradiation on Diamond Thin Films Synthesized by Hot-Filament Chemical Vapor Deposition
- The Effect of Ultraviolet Irradiation on Electroless Plating Process of Nickel
- The Effect of Ultraviolet Irradiation on Eleclro and Electroless Platings of Nickel
- The Effect of Thermal Oxidation of Silicon on Boron Diffusion in Extrinsic Conditions
- Concentration Dependence of the Diffusion Coefficient of Boron in Silicon
- Growth of Single-Walled Carbon Nanotubes below 450 °C Using Cobalt Catalyst
- Enhanced Thermal Oxidation of Silicon in Steam Ambient by UV-Irradiation
- Low-Temperature Oxidation of Silicon in Dry O_2 Ambient by UV-lrradiation
- Low-Temperature Oxidation of Silicon in H_2O_2 Ambient by UV Irradiation (Short Note)
- Synthesis of Multiwalled Carbon Nanotubes at Temperatures below 300°C by Hot-Filament Assisted Chemical Vapor Deposition
- Low-Temperature Thermal Oxidation of Silicon in N_2O by UV-Irradiation
- The Enhanced Electroplating of Nickel by UV-Irradiation before Plating Step
- Solutions of Simultaneous Equations for Oxidation Enhanced and Retarded Diffusions and Oxidation Stacking Fault in Silicon
- The Enhanced and Suppressed Electroless Plating of Copper by UV-Irradiation : Chemistry (incl. physical process)
- Growth of Single-Walled Carbon Nanotubes by Hot-Filament Assisted Chemical Vapor Deposition below 500 °C
- Effect of Tungsten on Synthesis of Multiwalled Carbon Nanotubes Using Cobalt as Catalyst
- Enhanced Thermal Oxidation of Silicon by UV-Irradiation
- The Enhanced Diffusion of Low-Concentration Phosphorus, Arsenic and Boron in Silicon during IR-Heating
- Thermal Oxidation of Antimony-Doped Silicon (Short Note)
- Erratum: "Synthesis of Multiwalled Carbon Nanotubes at Temperatures below 300 °C by Hot-Filament Assisted Chemical Vapor Deposition"
- The Diffusion of Bismuth in Silicon