Enhanced Thermal Oxidation of Silicon in Steam Ambient by UV-Irradiation
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概要
- 論文の詳細を見る
Thermal oxidation of silicon can be markedly enhanced by UV-irradiation in steam ambient. The typical thickness of the oxide is about 65 nm at 500℃ for 90 min. This value is nearly equal to that of usual oxidation in dry O_2 at 1000℃, and is much thicker than those produced by other oxidation techniques at relatively low temperatures, such as by dry O_2+UV and using oxygen plasma. The characteristics of the oxide films obtained by the present technique are similar to those of usual dry O_2 oxidation performed at high temperatures.
- 社団法人応用物理学会の論文
- 1992-06-15
著者
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Ishikawa Y
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Ishikawa Y
Dowa Mining Co. Ltd. Tokyo
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Ishikawa Y
Hokkaido Univ. Sapporo Jpn
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Ishikawa Yutaka
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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Nakamichi Ichiro
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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Nakamichi Ichiro
Department Of Electro And Electronics Engineering Nippon Institute Of Technology
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Nakamichi I
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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SHIBAMOTO Tsuyoshi
Department of Electrical and Electronics Engineering, Nippon Institute of Technology
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Shibamoto Tsuyoshi
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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