Effect of CdTe Layer Thickness on Hg_<1-x>Cd_xTe Epilayer Growth by Isothermal Vapor Phase Epitaxy Using (100) CdTe/GaAs Substrates and Void Formation at the Interface

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-07-15

著者

• ISSHIKI Minoru

  Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

• Wang Jun

  National Institute Of Materials And Chemical Research

• Isshiki Minoru

  Research Institute Of Mineral Dressing And Metallurgy Tohoku University

• Isshiki Minoru

  Instite For Advanced Materials Processing Tohoku University

• Ishikawa Y

  Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information

• Ishikawa Y

  Dowa Mining Co. Ltd. Tokyo

• ISHIKAWA Yukio

  Institute for Advanced Materials Processing, Tohoku University

• Ishikawa Y

  Hokkaido Univ. Sapporo Jpn

• Wang J

  State Key Laboratory Of Crystal Materials Shandong University

• Wang J

  Interdisciplinary Gt-aduate School Of Engineering Sciences Kyushu University

• KOO Bonheun

  Institute for Advanced Materials Processing, Tohoku University

• WANG Jifeng

  Institute for Advanced Materials Processing, Tohoku University

• Wang Jifeng

  Institute For Advanced Materials Processing Tohoku University

• Koo Bonheun

  Institute For Advanced Materials Processing Tohoku University

• Ishikawa Yukio

  Instite For Advanced Materials Processing Tohoku University

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