Optimum Designing of Single Crystalline Silicon Thin Film Solar Cells with Graded Active Layer : Semiconductors
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概要
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A carrier density gradient was given to the p-doped active layer of a conventional p-n junction solar cell employing the concept of the p-i-n junction structure used in amorphous silicon solar cells. Single crystalline silicon thin film solar cells with graded carrier density in the active layer were analyzed to optimize the cell structure utilizing a two-dimensional device simulator. Two types of cell structures were designed. In the case of Cell1, the carrier density was fixed to be 10^<16>cm^<-3> on the back surface field (BSF) side and changed exponentially for the p-n junction side from 10^<13>cm^<-3> to 10^<18>cm^<-3>. On the other hand, in the case of Cell2, the carrier density was fixed to be 10^<16>cm^<-3> on the p-n junction side and changed exponentially for the BSF side from 10^<13>cm^<-3> to 10^<18>cm^<-3>. Improvement in short circuit current density and open circuit voltage was observed. Therefore, high efficiency was expected under an electric field, considering the canier density gradient. In the case of a solar cell with a 5-μm-thick solar grade single crystalline silicon film, a conversion efficiency of about 14% was obtained for a flat surface solar cell.
- 社団法人応用物理学会の論文
- 2001-12-15
著者
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石川 靖彦
静岡大学電子工学研究所
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FUYUKI Takashi
Nara Institute of Science and Technology
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Yamamoto Y
College Of Engineering Hosei University
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Ishikawa Y
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Ishikawa Y
Dowa Mining Co. Ltd. Tokyo
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Ishikawa Y
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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Yamamoto Yuichi
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
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Yamamoto Y
Nippon Steel Corp. Kawasaki Jpn
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Yamamoto Y
Nara Inst. Sci. And Technol. Nara Jpn
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Ishikawa Y
Hokkaido Univ. Sapporo Jpn
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Yamamoto Yoshitugu
Department Of Chemistry For Materials Faculty Of Engineering Mie University
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Fuyuki T
Nara Inst. Sci. And Technol. Nara Jpn
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URAOKA Yukiharu
Materials Science, Nara Institute of Science and Technology
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FUYUKI Takashi
Materials Science, Nara Institute of Science and Technology
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YAMAMOTO Ykie
Materials Science, Nara Institute of Science and Technology
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ISHIKAWA Yasuaki
Materials Science, Nara Institute of Science and Technology
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Fuyuki Takashi
Nara Inst. Sci. And Technol. Nara Jpn
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Yamamoto Y
Material Science Japan Advanced Institute Of Science And Technology
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Yamamoto Yukie
Materials Science, Nara Institute of Science and Technology
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