Electrical Properties and Thermal Stability of Cu/6H-SiC Junctions : Electrical Properties of Condensed Matter

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概要

• 論文の詳細を見る

• Copper (Cu)/6H-SiC Schottky rectifiers were analyzed in detail for the first time. The barrier height of the as-deposited Cu contact on the 6H-SiC(0001) Si-face was determined to be 1.26 eV by internal photoemission spectroscopy. To obtain thermally stable electrical properties, the as-deposited Cu contacts were annealed. Cu/6H-SiC Schottky rectifiers had good electrical properties with the ideality factor below 1.1 even after thermal annealing at 500℃. However, the electrical properties of annealed Cu contacts over 500℃ were deteriorated, which is caused by the formation of copper silicides at the Cu/6H-SiC interface.

• 社団法人応用物理学会の論文
• 2001-01-15

著者

• HATAYAMA Tomoaki

  Graduate School of Materials Science, Nara Institute of Science and Technology

• FUYUKI Takashi

  Nara Institute of Science and Technology

• Hatayama Tomoaki

  Graduate School Of Materials Science Nara Institute Of Science And Technology

• Fuyuki Takashi

  Graduate School Of Material Science Nara Institute Of Science And Technology

• Uraoka Yukiharu

  Graduate School Of Materials Science Nara Institute Of Science And Technology

• Fuyuki Takashi

  Nara Inst. Sci. And Technol. Nara Jpn

• SUEZAKI Takashi

  Graduate School of Materials Science, Nara Institute of Science and Technology

• KAWAHITO Kazuaki

  Graduate School of Materials Science, Nara Institute of Science and Technology

• Suezaki Takashi

  Graduate School Of Materials Science Nara Institute Of Science And Technology

• Kawahito Kazuaki

  Graduate School Of Materials Science Nara Institute Of Science And Technology

• Uraoka Yukiharu

  Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan

• Hatayama Tomoaki

  Graduate School of Engineering, Kyoto Univercity

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