Low-temperature Polycrystalline Silicon Thin Film Transistor Flash Memory with Ferritin
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概要
- 論文の詳細を見る
Low-temperature polycrystalline silicon (poly-Si) thin film transistor (LTPS-TFT) flash memory is a potential candidate key component of system-on-panel (SOP). We have proposed the "bio-nano-process" for the fabrication of nanodots using biotechnology. In this study, we have successfully fabricated and developed LTPS-TFT flash memory with biomineralized inorganic nanodots for the first time. High-density homogeneous nanodots were made to adsorb on a silicon film using ferritin protein without the use of vacuum systems at high temperature. Electron charging and discharging in the dots were clearly confirmed from the transient behavior of the transfer curve at room temperature. This fabrication technique is promising for the development of flash memory for SOP.
- Japan Society of Applied Physicsの論文
- 2007-09-25
著者
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URAOKA Yukiharu
Nara Institute of Science and Technology
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YANO Hiroshi
Nara Institute of Science and Technology
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HATAYAMA Tomoaki
Nara Institute of Science and Technology
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Punchaipetch Prakaipetch
Nara Institute of Science and Technology
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Fuyuki Takashi
Nara Inst. Sci. And Technol. Nara Jpn
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Yamashita Ichiro
Advanced Technology Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Ichikawa Kazunori
Nara Institute of Science and Techonology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
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Fuyuki Takashi
Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
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Ichikawa Kazunori
Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
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Punchaipetch Prakaipetch
Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
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