Experimental and Theoretical Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors
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概要
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Degradation of Ga2O3–In2O3–ZnO (GIZO) thin-film transistors (TFTs), which are promising for driving circuits of next-generation displays, was studied. We evaluated degradation caused by applying gate voltage and drain voltage stress. A parallel shift of the transfer curve was observed under gate voltage stress. The amount of threshold voltage shift when applying gate and drain voltage stress was smaller than that in the case of only gate voltage stress. Joule heating caused by the drain current was observed. We reproduced this degradation of transfer curve change by device simulation. When we assumed the trap level as the density of state (DOS) model and increased two kinds of trap density, we obtained properties that show the same trends as the experimental results. We concluded that two degradation mechanisms occur under gate and drain voltage stress conditions.
- 2009-04-25
著者
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URAOKA Yukiharu
Nara Institute of Science and Technology
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KWON Jang
Samsung Advanced Institute of Technology
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JUNG Ji
Samsung Advanced Institute of Technology
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Fuyuki Takashi
Nara Inst. Sci. And Technol. Nara Jpn
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Fujii Mami
Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
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Jung Ji
Samsung Advanced Institute of Technology, Mt. 14-1, Nongseo-dong, Giheung-gu, Yongin, Gyeonggi-do 446-712, Korea
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