Reliability of High-Frequency Operation of Low-Temperature Polysilicon Thin Film Transistors under Dynamic Stress
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概要
- 論文の詳細を見る
The reliability of low-temperature poly-Si under dynamic stress was evaluated. A decrease in the mobility and the ON current was observed under the dynamic stress. We found that the degradation depends strongly on falling time and frequency. Based on these findings, degradation was found to be induced by high electric field during pulse fall duration. This degradation is dominated by hot electrons and can be improved by adopting a lightly doped drain(LDD)structure.
- 社団法人応用物理学会の論文
- 2000-12-01
著者
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HATAYAMA Tomoaki
Graduate School of Materials Science, Nara Institute of Science and Technology
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URAOKA Yukiharu
Graduate School of Materials Science, Nara Institute of Science and Technology
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FUYUKI Takashi
Nara Institute of Science and Technology
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Hatayama Tomoaki
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Fuyuki Takashi
Graduate School Of Material Science Nara Institute Of Science And Technology
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Kawamura T
Lcd Division Matsushita Electric Industrial Co. Ltd.
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KAWAMURA Tetsuya
LCD Division, Matsushita Electric Industrial Co., Ltd.
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TSUCHIHASHI Yuji
LCD Division, Matsushita Electric Industrial Co., Ltd.
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Uraoka Yukiharu
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Tsuchihashi Y
Matsushita Electric Industrial Co. Ltd. Ishikawa Jpn
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Fuyuki Takashi
Nara Inst. Sci. And Technol. Nara Jpn
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Uraoka Yukiharu
Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
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Hatayama Tomoaki
Graduate School of Engineering, Kyoto Univercity
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