Effect of SiO2 Tunnel Oxide Thickness on Electron Tunneling Mechanism in Si Nanocrystal Dots Floating-Gate Memories
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概要
- 論文の詳細を見る
The effect of tunnel oxide thickness on the charging/discharging mechanism and data retention of Si nanocrystal dot floating-gate devices was studied. The key point here is the difference in tunnel oxide thickness. Other parameters that can affect memory properties were carefully controlled. The mechanism of electron discharging was discussed on the basis of the difference in tunnel SiO2 thickness. Direct tunneling was found to dominate in the 3- and 5-nm-thick SiO2 tunnel oxides. However, Fowler–Nordheim (FN) tunneling affects the electron discharging characteristics of a thicker SiO2 tunnel oxide. It was found that memory properties also strongly depend on tunnel oxide thickness.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-05-15
著者
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Fuyuki Takashi
Graduate School Of Material Science Nara Institute Of Science And Technology
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Uraoka Yukiharu
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Punchaipetch Prakaipetch
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Ichikawa Kazunori
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Takahashi Eiji
Process Research Center R&D Laboratory, Nissin Electric Co., Ltd., 47, Umezu-Takase-cho, Ukyo-ku, Kyoto 615-8686, Japan
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Hayashi Tsukasa
Process Research Center R&D Laboratory, Nissin Electric Co., Ltd., 47, Umezu-Takase-cho, Ukyo-ku, Kyoto 615-8686, Japan
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Ogata Kiyoshi
Process Research Center R&D Laboratory, Nissin Electric Co., Ltd., 47, Umezu-Takase-cho, Ukyo-ku, Kyoto 615-8686, Japan
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Uraoka Yukiharu
Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
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Ogata Kiyoshi
Process Research Center R&D Laboratory, Nissin Electric Co., Ltd., 47, Umezu-Takase-cho, Ukyo-ku, Kyoto 615-8686, Japan
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Punchaipetch Prakaipetch
Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
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Hayashi Tsukasa
Process Research Center R&D Laboratory, Nissin Electric Co., Ltd., 47, Umezu-Takase-cho, Ukyo-ku, Kyoto 615-8686, Japan
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Takahashi Eiji
Process Research Center R&D Laboratory, Nissin Electric Co., Ltd., 47, Umezu-Takase-cho, Ukyo-ku, Kyoto 615-8686, Japan
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