Analysis of the Temperature Characteristics in Polycrystalline Si Solar Cells Using Modified Equivalent Circuit Model

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概要

• 論文の詳細を見る

• We have evaluated the influence of grain boundaries on the temperature dependence of cell performance using a modified 2-diode equivalent circuit model. In this model, microscopic inhomogeneity of resistivity at or near grain boundaries can be taken into consideration. The calculated results by the modified 2-diode model agreed well with the measured current-voltage curves, and the validity of the fitting parameters in this model was discussed. One of the fitting parameters, $r$ is defined as the ratio of the recombination area, in which the recombination of minority carriers is pronounced. At 20°C, $r$ of the polycrystalline Si cell was larger than that of the single-crystalline Si cell. However, the difference in $r$ between them became negligible at temperatures above 80°C. These dependences were explained by considering the behavior of the free carriers in the recombination centers.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-12-15

著者

• NISHIOKA Kensuke

  Graduate School of Materials Science, Nara Institute of Science and Technology

• SAKITANI Nobuhiro

  Graduate School of Materials Science, Nara Institute of Science and Technology

• YAMAMOTO Yukie

  Graduate School of Materials Science, Nara Institute of Science and Technology

• Kurobe Ken-ichi

  Department Of Electronic Science And Engineering Kyoto University

• Fuyuki Takashi

  Graduate School Of Material Science Nara Institute Of Science And Technology

• Uraoka Yukiharu

  Graduate School Of Materials Science Nara Institute Of Science And Technology

• Ishikawa Yasuaki

  Graduate School Of Materials Science Nara Institute Of Science And Technology

• Kurobe Ken-ichi

  Department of Electronic Science and Engineering, Kyoto University, Yoshida-Honmachi, Sakyo, Kyoto 606-8501, Japan

• Nishioka Kensuke

  Graduate School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

• Nishioka Kensuke

  Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan

• Yamamoto Yukie

  Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan

• Uraoka Yukiharu

  Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan

• Sakitani Nobuhiro

  Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan

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