Analysis of Hot Carrier Effect in Low-Temperature Poly-Si Gate-Overlapped Lightly Doped Drain Thin Film Transistors
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概要
- 論文の詳細を見る
Low-temperature poly-Si thin film transistor (TFT) is widely expected as the most promising technology for realizing system on panels. We fabricated the poly-Si TFT with a gate-overlapped Lightly Doped Drain (GOLD) structure. Reliability was evaluated using electrical stress comparing conventional lightly doped drain (LDD) and single drain structures. We have confirmed that the degradation of ON current and the field effect mobility was very small compared to the case of conventional LDD or non-LDD structures. We have analyzed the reliability of the GOLD TFT using a two-dimensional device simulator and emission microscope. We found that more hot electrons are generated in GOLD TFT, however, a vertical negative field plays a dominant role for improving the reliability of the GOLD TFT. Based on the experimental and theoretical results, we proposed a new reliability model. Impact ionization occurs far from the interface between the oxide and polysilicon by the vertical negative field. Therefore, the damaged region in poly-Si does not affect such electrical performance as drain current.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-15
著者
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Fuyuki Takashi
Graduate School Of Material Science Nara Institute Of Science And Technology
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Uraoka Yukiharu
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Kawakita Tetsuo
Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5, Takayama, Ikoma, Nara 630-0101, Japan
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Fuyuki Takashi
Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5, Takayama, Ikoma, Nara 630-0101, Japan
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Nakagawa Hidehiro
Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5, Takayama, Ikoma, Nara 630-0101, Japan
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Uraoka Yukiharu
Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
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