Floating Gate Memory Based on Ferritin Nanodots with High-$k$ Gate Dielectrics
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概要
- 論文の詳細を見る
The memory characteristics of nanodot-type floating gate memory with high-$k$ tunnel oxide were investigated by measuring the memory characteristics of metal–oxide–semiconductor (MOS) capacitors with biomineralized inorganic nanodots. Biomineralized iron bio nanodots (Fe-BNDs) accommodated in ferritin were utilized as a storage charge. High-density and monolayer Fe-BNDs were absorbed by high-$k$ tunnel oxide. Fabricated MOS capacitors showed clear hysteresis in capacitance–voltage ($C$–$V$) characteristics. The observed hysteresis in $C$–$V$ characteristics was occurred by charging and discharging to Fe-BNDs. A large memory window and good retention characteristic were obtained using high-$k$ as tunnel oxide. This is caused by the difference in the charging mechanism to Fe-BND. This research confirmed that the combination of bio nanodot floating gate memory with high-$k$ film is promising for next-generation memory devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
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Yamashita Ichiro
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Fuyuki Takashi
Graduate School Of Material Science Nara Institute Of Science And Technology
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Yoshimaru Masaki
Semiconductor R&d Division Semiconductor Business Group Oki Electric Industry Co. Ltd.
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Uraoka Yukiharu
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Ohara Kosuke
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Yaegashi Toshitake
Semiconductor Technology Academic Research Center
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Moniwa Masahiro
Semiconductor Technology Academic Research Center, 3-17-2 Shinyokohama, Kohoku-ku, Yokohama 222-0033, Japan
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MONIWA Masahiro
Semiconductor Technology Academic Research Center
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Uraoka Yukiharu
Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
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Yaegashi Toshitake
Semiconductor Technology Academic Research Center, 3-17-2 Shinyokohama, Kohoku-ku, Yokohama 222-0033, Japan
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Ohara Kosuke
Graduated School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
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Yoshimaru Masaki
Semiconductor Technology Academic Research Center, 3-17-2 Shinyokohama, Kohoku-ku, Yokohama 222-0033, Japan
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