Degradation in Low-Temperature Poly-Si Thin Film Transistors Depending on Grain Boundaries
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概要
- 論文の詳細を見る
The low-temperature poly-Si process is one of the most promising technologies for realizing new displays such as system on panel. For this purpose, an improvement in the reliability, as well as promoting the electric performance is very important. In this work, we attempted to study the degradation in TFTs by hot-carrier and joule heating effects focusing on the crystallinity of poly-Si thin films. For the evaluation of the hot-carrier effect, we found that the grain size dependence of hot-carrier degradation differed between the cases of DC and AC stresses in both n-channel and p-channel thin-film transistors (TFTs). The difference in the grain size dependencies is attributed to the difference between DC and DC stresses in degradation mechanism. For the evaluation of thermal degradation, a universal relationship between the temperature and the amount of the voltage shift in n-channel TFT was observed independent of the crystallinity of the films used. It was considered that electron injection into gate oxides is one of the dominant causes of thermal degradation.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-05-15
著者
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KIRIMURA Hiroshi
Graduate School of Materials Science, Nara Institute of Science and Technology
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Yano Hiroshi
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Kitajima Koji
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Hatayama Tomoaki
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Fuyuki Takashi
Graduate School Of Material Science Nara Institute Of Science And Technology
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Uraoka Yukiharu
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Yano Hiroshi
Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama, 8916-5, Ikoma, Nara 630-0192, Japan
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Fuyuki Takashi
Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama, 8916-5, Ikoma, Nara 630-0192, Japan
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Uraoka Yukiharu
Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama, 8916-5, Ikoma, Nara 630-0192, Japan
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Uraoka Yukiharu
Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
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Hatayama Tomoaki
Graduate School of Engineering, Kyoto Univercity
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Hatayama Tomoaki
Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama, 8916-5, Ikoma, Nara 630-0192, Japan
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Kitajima Koji
Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama, 8916-5, Ikoma, Nara 630-0192, Japan
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Kirimura Hiroshi
Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama, 8916-5, Ikoma, Nara 630-0192, Japan
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