Floating Nanodot Gate Memory Devices Based on Biomineralized Inorganic Nanodot Array as a Storage Node
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概要
- 論文の詳細を見る
The memory effect in floating nanodot gate field-effect-transistor (FET) was investigated by fabricating biomineralized inorganic nanodot embedded metal–oxide–semiconductor (MOS) devices. Artificially biomineralized cobalt (Co) oxide cores accommodated in ferritins were utilized as a charge storage node of floating gate memory. Two dimensional array of Co oxide core accommodated ferritin were, after selective protein elimination, buried into the stacked dielectric layers of MOS capacitors and MOSFETs. Fabricated MOS capacitors and MOSFETs presented a clear hysteresis in capacitance–voltage ($C$–$V$) characteristics and drain current–gate voltage ($I_{\text{D}}$–$V_{\text{G}}$) characteristics, respectively. The observed hysteresis in $C$–$V$ and $I_{\text{D}}$–$V_{\text{G}}$ are attributed to the electron and hole confinement within the embedded ferritin cores. These results clearly support the biologically synthesized cores work as charge storage nodes. This work proved the feasibility of the biological path for fabrication of electronic device components.
- Japan Society of Applied Physicsの論文
- 2006-01-25
著者
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Yamashita Ichiro
Graduate School Of Materials Science Nara Institute Of Science And Technology
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MIURA Atsushi
Graduate School of Materials Science, Nara Institute of Science and Technology
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MATSUMURA Takashi
Graduate School of Materials Science, Nara Institute of Science and Technology
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MIURA Atsushi
Division of Chemistry, Graduate School of Science, Hokkaido University
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Yano Hiroshi
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Hikono Takio
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Hatayama Tomoaki
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Yoshii Shigeo
Advanced Technology Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Fuyuki Takashi
Graduate School Of Material Science Nara Institute Of Science And Technology
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Miura Atsushi
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Uraoka Yukiharu
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Miura Atsushi
Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0101, Japan
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Yoshii Shigeo
Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd., 3-4 Hikaridai, Seika, Kyoto 619-0237, Japan
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Uraoka Yukiharu
Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
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Hatayama Tomoaki
Graduate School of Engineering, Kyoto Univercity
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Hatayama Tomoaki
Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
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Matsumura Takashi
Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
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