Improved Electronic Properties of Laser-Doped Emitters by Reducing Surface Roughness
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概要
- 論文の詳細を見る
Laser doping (LD) can help form emitters at low cost and in high throughput because it operates in air atmosphere and at room temperature. Moreover, LD makes high-efficiency structures in a very simple way by melting and diffusing impurities on selective areas. In this study, evaluation of the relationship between multicrystalline silicon (mc-Si) surface conditions and electric properties is carried out. The results show that the surface electric properties were improved and conversion efficiencies were increased. This was accomplished by changing the surface conditions from rough to smooth by surface etching and vacuum treatment before LD.
- 2012-10-25
著者
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NISHIMURA Hideki
Graduate Student of Toyohashi University of Technology
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Fuyuki Takashi
Graduate School Of Material Science Nara Institute Of Science And Technology
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Hirata Kenji
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Fuyuki Takashi
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan
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Hasegawa Mitsuhiro
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan
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Katagiri Takuya
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan
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Hirata Kenji
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan
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Nishimura Hideki
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan
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