Shape Control of Trenched 4H-SiC C-Face by Thermal Chlorine Etching
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概要
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The shape control inside a trenched 4H-SiC by atmospheric-pressure chlorine (Cl2) etching has been investigated. The trench fabricated by a plasma process on the 4H-SiC(000\bar{1}) C-face with 4°-off toward [11\bar{2}0] was used. The inside of the 4H-SiC trench was thermally etched in Cl2 ambience at 900 °C. The subtrenches intentionally formed by the plasma process were successfully eliminated along with thermal Cl2 etching. With further Cl2 etching, the 4°-off (000\bar{1}) C-face at the trench bottom disappeared and the V-shaped bottom with a specific angle for the (000\bar{1}) basal plane was formed. The mechanism underlying the change inside the trench shape is discussed in comparison with the off-angle dependence of Cl2 etching rate.
- 2012-05-25
著者
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Yano Hiroshi
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Hatayama Tomoaki
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Fuyuki Takashi
Graduate School Of Material Science Nara Institute Of Science And Technology
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Yano Hiroshi
Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0192, Japan
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Koketsu Hidenori
Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0192, Japan
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Hatayama Tomoaki
Graduate School of Engineering, Kyoto Univercity
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