Dependence of Solar Cell Performance on Electronic Properties at Grain Boundaries in Polycrystalline Silicon Thin Films Deposited by Atmospheric Pressure Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• The relationship between the electronic properties of grain boundaries and polycrystalline silicon (poly-Si) thin-film solar cell performance was investigated. The poly-Si thin films were directly deposited on foreign substrates by atmospheric pressure chemical vapor deposition. We evaluated the interface state density at the grain boundaries of poly-Si thin films deposited under different deposition conditions by measuring the temperature dependence of Hall mobility. We found a strong correlation between the interface state density and poly-Si thin film solar cell performance. The decrease in interface state density resulted in the improvement of the solar cell performance, which was caused by decreasing the minority carrier recombination velocity at grain boundaries.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-08-15

著者

• Fuyuki Takashi

  Graduate School Of Material Science Nara Institute Of Science And Technology

• Yamazaki Tsutomu

  Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama, Ikoma, Nara 630-0192, Japan

• Uraoka Yukiharu

  Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan

• Matsumura Yoshiaki

  Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama, Ikoma, Nara 630-0192, Japan

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