Evaluation of Crystallinity in 4H–SiC{0001} Epilayers Thermally Etched by Chlorine and Oxygen System
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概要
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A thermal etching with a mixed gas of chlorine and oxygen was applied to analyze the crystal defects in 4H–SiC{0001} epilayers for the first time. The etching rate of the (0001)Si face was more one-tenth slower than that of the $(000\bar1)$C face. Etch pits and oval hillocks were observed on the (0001)Si and $(000\bar{1})$C faces, respectively. The shapes of the etch pits were similar to those in the case of etching by a molten potassium-hydroxide method. The etch pits on the (0001)Si face were minority carrier traps as confirmed by a planar mapping electron-beam-induced current method. On the other hand, oval hillocks on the etched $(000\bar{1})$C face were not minority carrier traps. On the basis of these results, etching mechanisms are discussed.
- 2006-07-25
著者
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Yano Hiroshi
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Hatayama Tomoaki
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Fuyuki Takashi
Graduate School Of Material Science Nara Institute Of Science And Technology
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Uraoka Yukiharu
Graduate School Of Materials Science Nara Institute Of Science And Technology
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