Low-Temperature Microcrystalline Silicon Film Deposited by High-Density and Low-Potential Plasma Technique Using Hydrogen Radicals
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概要
- 論文の詳細を見る
As a novel direct deposition method of microcrystalline silicon, we have developed the high-density and low-potential plasma-enhanced silane generating chemical vapor deposition (CVD) system. We have studied a two-step deposition process which consists of the silicon nucleation step using atomic hydrogen (radicals) and the microcrystalline growth step using silane plasmas at low temperature. Transmission electron microscopy (TEM) and micro-ultraviolet Raman spectrometry (UV-Raman) analyses reveal that silicon films crystallize with a low defect density starting from the interface between the SiO2 substrate and the film. Furthermore, the electron mobility determined on the basis of the TFT characteristics indicates that this method is highly effective for the direct deposition of microcrystalline silicon.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-12-15
著者
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Fuyuki Takashi
Graduate School Of Material Science Nara Institute Of Science And Technology
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KIRIMURA Hiroya
R & D Laboratories, Nissin Electric Co., Ltd.
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KUBOTA Kiyoshi
R & D Laboratories, Nissin Electric Co., Ltd.
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TAKAHASHI Eiji
R & D Laboratories, Nissin Electric Co., Ltd.
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KISHIDA Shigeaki
R & D Laboratories, Nissin Electric Co., Ltd.
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OGATA Kiyoshi
R & D Laboratories, Nissin Electric Co., Ltd.
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Fuyuki Takashi
Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
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Uraoka Yukiharu
Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
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Ogata Kiyoshi
R & D Laboratories, Nissin Electric Co., Ltd., 47 Umezu-Takase-cho, Ukyo-ku, Kyoto 615-8686, Japan
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Kishida Shigeaki
R & D Laboratories, Nissin Electric Co., Ltd., 47 Umezu-Takase-cho, Ukyo-ku, Kyoto 615-8686, Japan
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