Fabrication of Anodic Oxidation Films on 4H–SiC at Room Temperature Using HNO3-Based Electrolytes
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概要
- 論文の詳細を見る
Oxidation of 4H–SiC substrates by anodic methods using HNO3 and HF+HNO3 electrolytes was carried out at room temperature. Oxide layers with a thickness of 1 μm were formed in 5 min, which is 100 times faster than by a conventional dry thermal oxidation method. The consumed SiC layer is $1/3$ of the oxide thickness. The oxide layer was found to be SiO2 including carbon by XPS analysis. The carbon atomic concentration in the oxide layers could be reduced by thermal annealing in a gas mixture of $\text{H$_{2}$/Ar}=1:9$.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-06-15
著者
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Mikami Hidenori
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Yano Hiroshi
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Hatayama Tomoaki
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Fuyuki Takashi
Graduate School Of Material Science Nara Institute Of Science And Technology
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Uraoka Yukiharu
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Uraoka Yukiharu
Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
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Hatayama Tomoaki
Graduate School of Engineering, Kyoto Univercity
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