Effects of Dot Density and Dot Size on Charge Injection Characteristics in Nanodot Array Produced by Protein Supramolecules

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概要

• 論文の詳細を見る

• The charge injection characteristics of nanodot arrays for floating nanodot gate memories (FNGMs) were studied using a metal–oxide–semiconductor (MOS) capacitor having density-controlled arrays of homogenous nanodots in a SiO2 layer. Nanodot arrays were prepared using cage-shaped proteins, Listeria ferritin and ferritin with a nanodot core, the diameters of which are 4.5 and 7 nm, respectively. Dot densities are from $3.3\times 10^{9}$ to $1.8\times 10^{12}$ cm-2 for Listeria ferritin and from $3.8\times 10^{9}$ to $7.9\times 10^{11}$ cm-2 for ferritin. The capacitance–voltage ($C$–$V$) characteristics of the obtained MOS capacitors were measured at 1 MHz by applying a DC bias voltage from $-10$ to +10 V. The flat-band voltage shift was found to depend on both dot density and dot size, and to be numerically proportional to the sum of the upper hemisphere surface areas of nanodots. It is important to balance dot density and dot size in order to fabricate advanced FNGMs, and the appropriate design of the array is necessary.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-11-15

著者

• MIURA Atsushi

  Graduate School of Materials Science, Nara Institute of Science and Technology

• MIURA Atsushi

  Division of Chemistry, Graduate School of Science, Hokkaido University

• Kumagai Shinya

  Advanced Technology Research Laboratories Panasonic Corporation

• Yoshii Shigeo

  Advanced Technology Research Laboratories Matsushita Electric Industrial Co. Ltd.

• Fuyuki Takashi

  Graduate School Of Material Science Nara Institute Of Science And Technology

• Yamada Kiyohito

  Advanced Technology Research Laboratories Matsushita Electric Industrial Co. Ltd.

• Miura Atsushi

  Graduate School Of Materials Science Nara Institute Of Science And Technology

• Yamashita Ichiro

  Advanced Technology Research Laboratories Matsushita Electric Industrial Co. Ltd.

• Miura Atsushi

  Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0101, Japan

• Yoshii Shigeo

  Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd., 3-4 Hikaridai, Seika, Kyoto 619-0237, Japan

• Uraoka Yukiharu

  Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan

• Yamashita Ichiro

  Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd., 3-4 Hikaridai, Seika, Kyoto 619-0237, Japan

• Yamada Kiyohito

  Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd., 3-4 Hikaridai, Seika, Kyoto 619-0237, Japan

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