Polycrystalline Silicon Thin Film for Solar Cells Utilizing Aluminum Induced Crystallization Method
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概要
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In order to realize a polycrystalline silicon (poly-Si) thin film solar cell with low cost and high efficiency, high-quality poly-Si is indispensable. We fabricated a high-quality poly-Si film by using aluminum induced crystallization (AIC) as a method of crystallizing amorphous silicon. AIC is a method of crystallizing amorphous silicon by heat treatment below the eutectic temperature (577°C). Using AIC poly-Si film as the seeding layer and atmospheric pressure chemical vapor deposition (APCVD), continuous columnar poly-Si with large grain size was achieved. Deposition of the poly-Si thin film onto AIC poly-Si films was carried out using APCVD. Crystallinity and electronic property of the deposited films was evaluated. Comparably high Hall mobility of more than 80 cm2/Vs was successfully obtained.
- 2004-03-15
著者
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NAKAMURA Atsushi
Graduate School of Electronic Science and Technology, Shizuoka University
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Fuyuki Takashi
Graduate School Of Material Science Nara Institute Of Science And Technology
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Uraoka Yukiharu
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Ishikawa Yasuaki
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Fuyuki Takashi
Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
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Uraoka Yukiharu
Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
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Uraoka Yukiharu
Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
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Ishikawa Yasuaki
Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
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