Zn1-xCdxO Film Growth Using Remote Plasma-Enhanced Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Zn1-xCdxO films were successfully grown by remote plasma-enhanced metalorganic chemical vapor deposition (RPE-MOCVD). The content ratio of Zn1-xCdxO films was controlled by changing the molar ratio of diethyl zinc (DEZn) to dimethyl cadmium (DMCd). The wurtzite structure of Zn1-xCdxO films was obtained by increasing the Cd content up to $x=0.697$. The optical-band-gap energy of Zn1-xCdxO films was tuned between 1.85 eV and 3.28 eV at room temperature. The photoluminescence emission of hexagonal Zn1-xCdxO films up to $x = 0.697$ was observed at room temperature.
- Japan Society of Applied Physicsの論文
- 2004-08-15
著者
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NAKAMURA Atsushi
Graduate School of Electronic Science and Technology, Shizuoka University
-
Ishihara Junji
Research Institute Of Electronics Shizuoka University
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Shigemori Satoshi
Research Institute Of Electronics Shizuoka University
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Temmyo Jiro
Reseach Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 Japan
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Aoki Toru
Reseach Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 Japan
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