Nucleation Control by Intermittent Supply of Dichlorosilane towards the Fabrication of Polycrystalline Silicon Thin Films with Large Grain Size
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概要
- 論文の詳細を見る
To obtain polycrystalline Si (poly-Si) thin films with large grain size, we propose a nucleation control method by intermittent supply of Si source gas in atmospheric pressure chemical vapor deposition. By intermittent supply of dichlorosilane as Si source gas, the nucleus density was controlled to between $10^5$ and $10^7$ cm-2. The maximum grain size of 22 μm with a film thickness of 15 μm was obtained. By optimizing the conditions of intermittent ratio and time, a relatively high preferential orientation of (220) over 65% was achieved. In addition, the poly-Si thin film with continuous columnar structure was obtained.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-11-15
著者
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Fuyuki Takashi
Graduate School Of Material Science Nara Institute Of Science And Technology
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Uraoka Yukiharu
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Ishikawa Yasuaki
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Fuyuki Takashi
Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
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Uraoka Yukiharu
Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
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Uraoka Yukiharu
Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
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