Plasma-Induced Transconductance Degradation of nMOSFET with Thin Gate Oxide

概要

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Degradation of metal-oxide-semiconductor field-effect transistors (MOSFETs) reliability such as the relative transconductance reduction by plasma exposure is evaluated. The linear region peak transconductance (gm) decreases with antenna ratio (exposed antenna area/gate area) due to the plasma-induced Si-SiO_2 interface state generation. The Si-SiO_2 interface-related gm reduction which is defined as (gm_0-gm)/gm, where gm_0 is the initial value of gm, decreases as the gate oxide thickness decreases. It is also found that the decreasing amount of gm depends on the conduction current from the plasma. The correlation between the (gm_0-gm)/gm and the plasma-induced reduction of charge-to-breakdown of the gate oxide with a constant current stress (ΔQ_ltBDgt) is observed, and the result shows that the gm reduction of nMOSFET during the plasma process is severe to the plasma-induced damage compared with the gate oxide breakdown.
社団法人電子情報通信学会の論文
1995-03-25