A New Technique for Evaluating Gate Oxide Reliability Using a Photon Emission Method (Special Issue on Sub-Half Micron Si Device and Process Technologies)
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概要
- 論文の詳細を見る
A new technique for evaluating gate oxide reliability using photon emission method has been developed. This method enables the measurements of the initial breakdown characteristics, reliability testing and failure analysis consistently. From the experimental results, followings are clarified for the first time using this technique. Failure modes in the initial characteristics have close correlation to TDDB characteristics and both characteristics correspond to the location of breakdown spot. The results suggest measures to improve the reliability of gate oxide and the existance of new failure mechanism.
- 社団法人電子情報通信学会の論文
- 1993-04-25
著者
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Tsuji Kazuhiko
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Uraoka Yukiharu
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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Uraoka Yukiharu
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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- A New Technique for Evaluating Gate Oxide Reliability Using a Photon Emission Method (Special Issue on Sub-Half Micron Si Device and Process Technologies)