InGaAs/GaAs Vertical-Cavity Surface Emitting Laser on GaAs (311)B Substrate Using Carbon Auto-Doping
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概要
- 論文の詳細を見る
We have realized a low threshold InGaAs/GaAs vertical-cavity surface emitting laser (VCSEL) grown on GaAs (311)B substrates by metalorganic chemical-vapor deposition. The lasers exhibited a threshold current of 16 mA and a threshold current density of 810 a/cm^2 for a 50 μmφ circular active area device. We obtained low electric resistance of p-type DBRs on GaAs (311)B by using AlAs carbon auto-doping with a hole concentration of 2×10^<19> cm^<-3>. We also demonstrated a stable polarization operation of (311)B grown VCSELs.
- 社団法人応用物理学会の論文
- 1998-03-30
著者
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Arai M
Microsystem Research Center P&i Laboratories Tokyo Institute Of Technology
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Hatori Nobuaki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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MIZUTANI Akimasa
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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NISHIYAMA Nobuhiko
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Nishiyama N
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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