InGaAs/GaAs Vertical-Cavity Surface Emitting Laser on GaAs (311)B Substrate Using Carbon Auto-Doping
スポンサーリンク
概要
- 論文の詳細を見る
We have realized a low threshold InGaAs/GaAs vertical-cavity surface emitting laser (VCSEL) grown on GaAs (311)B substrates by metalorganic chemical-vapor deposition. The lasers exhibited a threshold current of 16 mA and a threshold current density of 810 a/cm^2 for a 50 μmφ circular active area device. We obtained low electric resistance of p-type DBRs on GaAs (311)B by using AlAs carbon auto-doping with a hole concentration of 2×10^<19> cm^<-3>. We also demonstrated a stable polarization operation of (311)B grown VCSELs.
- 社団法人応用物理学会の論文
- 1998-03-30
著者
-
Arai M
Microsystem Research Center P&i Laboratories Tokyo Institute Of Technology
-
Hatori Nobuaki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
-
Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
-
MIZUTANI Akimasa
Precision and Intelligence Laboratory, Tokyo Institute of Technology
-
NISHIYAMA Nobuhiko
Precision and Intelligence Laboratory, Tokyo Institute of Technology
-
Nishiyama N
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
-
Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
関連論文
- Reactive ion etching of Si using Ar/F2 plasma (Special issue: Microprocesses and nanotechnology)
- Three-Dimensional Hollow Optical Waveguide with an Etched Groove Substrate
- Modeling and Fabrication of Hollow Optical Waveguide for Photonic Integrated Circuits
- Hollow Optical Waveguide for Temperature-Insensitive Photonic Integrated Circuits : Optics and Quantum Electronics
- 1.2μm Band GaInAs/GaAs High-Density Multiple-Wavelength Vertical Cavity Surface Emitting Laser Array
- Effect of Annealing on Highly Strained GaInAs/GaAs Quantum Wells : Semiconductors
- Low Threshold Current Density Operation of 1.16μm Highly Strained GaInAs/GaAs Vertical Cavity Surface Emitting Lasers on (100) GaAs Substrate : Optics and Quantum Electronics
- 1.4μm GaInNAs/GaAs Quantum Well Laser Grown by Chemical Beam Epitaxy : Short Note
- GaInAs/GaAs Micro-Arc Ring Semiconductor Laser
- Design and Lasing Operation of Micro-Arc-Ring Lasers