Low Bias Voltage Dry Etching of InP by Inductively Coupled Plasma Using SiCl_4/Ar
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概要
- 論文の詳細を見る
We have demonstrated anisotropic and smooth etching of InP by an inductively coupled plasma (ICP) method using SiCl_4/Ar and processing at a high substrate temperature. We measured the etching rate by varying the substrate temperature, process pressure and rf power. Vertical micropillars of InP with smooth etched surfaces were obtained under relatively small dc biases of lower than -50 V. The ICP etching is considered to be useful for low-damage microfabrication of InP systems by optimizing the etching condition.
- 社団法人応用物理学会の論文
- 1998-12-15
著者
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Arai M
Microsystem Research Center P&i Laboratories Tokyo Institute Of Technology
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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Matsutani Akihiro
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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