Interface Recombination Reduction by (NH_4)_2S_x-Passivation in Metalorganic Chemical Vapor Deposition Regrown GaAlAs/GaAs Buried Heterostructure Lasers and Estimation of Threshold Currents in Microeavity Surface Emitting Lasers
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概要
- 論文の詳細を見る
Ammonium sulfide [(NH_4)_2S_x] treatment has been applied to a metalorganic chemical vapor deposition (MOCVD) regrowth process for GaAlAs/GaAs buried heterostructure (BH) lasers to reduce the nonradiative interface recombination. A mirrorlike Ga_<0.9>Al_<0.1>As layer was successfully grown on Ga_<0.7>Al_<0.3>As by introducing sulfur treatment before regrowth. The interface recombination velocity along the side wall of the active region was significantly reduced. This fabrication technology is expected to be effective in the realization of ultralow-threshold microcavity lasers.
- 社団法人応用物理学会の論文
- 1992-10-15
著者
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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TAMANUKI Takemasa
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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Tamanuki Takemasa
Networking Research Laboratories Nec Corporation:(present Address)interintelligence Inc.
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