Vertical Cavity Surface-Emitting Laser Array for 1.3μm Range Parallel Optical Fiber Transmissions
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概要
- 論文の詳細を見る
Long-wavelength 1.3μm GaInAsP/InP vertical cavity surface-emitting lasers (VCSELs) have been demonstrated in an array configuration. With the strong current confinement by a buried heterostructure and the efficient optical feedback by a dielectric cavity, five VCSEL elements in a 2×4 array operated at room temperature with 5 mW total power output and wavelength error within ±5%. The stacked planar optics including the VCSEL array is a promising optical transmitter in ultra large scale parallel optical communication systems.
- 社団法人電子情報通信学会の論文
- 1995-02-25
著者
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Koyama Fumio
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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BABA Toshihiko
Division of Electrical and Computer Engineering, Yokohama National University
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Suzuki Katsumasa
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Kondo T
Hiroshima Univ. Higashi-hiroshima‐shi Jpn
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Baba T
Yokohama National Univ. Yokohama‐shi Jpn
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Yogo Yukiaki
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Kondo Tomonobu
Division of Electrical and Computer Engineering, Yokohama National University
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Yogo Yukiaki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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Baba Toshihiko
Division Of Electrical And Computer Engineering Yokohama National University
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- Structure-Dependent Lasing Characteristics of Tunnel Injection GaInAs/AlGaAs Single-Quantum-Well Lasers
- 1.2μm Band GaInAs/GaAs High-Density Multiple-Wavelength Vertical Cavity Surface Emitting Laser Array
- Optical Quality Dependence on Growth Rate for Solid-Source Molecular Beam Epitaxy Grown Highly Strained GaInAsSb/GaAs Quantum Wells
- Improvement in Photoluminescence Efficiency of GaInNAs/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition for Low-Threshold 1.3μm Range Lasers
- Surfactant Effect of Sb on GaInAs Quantum Dots Grown by Molecular Beam Epitaxy
- Elongation of Emission Wavelength of GaInAsSb-Covered (Ga) InAs Quantum Dots Grown by Molecular Beam Epitaxy