Surface Temperature Increase in Reactive Ion Beam Etch and Improvement of Profiles by Multistep Etching
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概要
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We have carried out an in-situ measurement of temperature variation by a radiation thermometer during Cl_2-reactive ion beam etch (RIBE). It is found that the surface temperature of the sample is noticeably increased by the etching with high ion-extraction voltage. The surface temperature was increased by about 250 K under ion irradiation with extraction voltage of 400 V for 15 min. We found that side-etch is caused by the temperature rise of the sample surface due to ion irradiation. We have also proposed a multistep RIBE for improving etched profiles.
- 社団法人応用物理学会の論文
- 1995-04-15
著者
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Arai M
Microsystem Research Center P&i Laboratories Tokyo Institute Of Technology
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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Matsutani Akihiro
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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