Smooth and vertical profile dry etching of Si using XeF2 plasma (Special issue: Microprocesses and nanotechnology)
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
関連論文
- Reactive ion etching of Si using Ar/F2 plasma (Special issue: Microprocesses and nanotechnology)
- Three-Dimensional Hollow Optical Waveguide with an Etched Groove Substrate
- Modeling and Fabrication of Hollow Optical Waveguide for Photonic Integrated Circuits
- Hollow Optical Waveguide for Temperature-Insensitive Photonic Integrated Circuits : Optics and Quantum Electronics
- 1.2μm Band GaInAs/GaAs High-Density Multiple-Wavelength Vertical Cavity Surface Emitting Laser Array
- Effect of Annealing on Highly Strained GaInAs/GaAs Quantum Wells : Semiconductors
- Low Threshold Current Density Operation of 1.16μm Highly Strained GaInAs/GaAs Vertical Cavity Surface Emitting Lasers on (100) GaAs Substrate : Optics and Quantum Electronics
- 1.4μm GaInNAs/GaAs Quantum Well Laser Grown by Chemical Beam Epitaxy : Short Note
- GaInAs/GaAs Micro-Arc Ring Semiconductor Laser
- Design and Lasing Operation of Micro-Arc-Ring Lasers
- Characterization of Residual Stress in Active Region due to AlAs Native Oxide of Vertical-Cavity Surface-Emitting Lasers
- InGaAs/GaAs Strained Quantum Well Lasers with Etched Micro-Corner Reflectors
- GaInAsP Microcylinder (Microdisk) Injection Laser With AlInAs (O_x) Claddings : Optics and quantum Electronics
- Design and Fabrication of Double-Cavity Tunable Filter Using Micromachined Structure
- Fabrication of Micro-Aperture Surface Emitting Laser for Near Field Optical Data Storage
- Smooth and vertical profile dry etching of Si using XeF2 plasma (Special issue: Microprocesses and nanotechnology)
- Generation of solid-source H2O plasma and its application to dry etching of CaF2 (Special issue: Microprocesses and nanotechnology)
- Wavelength Tuning of Double-Cavity Micromachined Filter with Electrical and Thermal Actuations
- Solid Source Dry Etching Process for GaAs and InP
- Design, Fabrication, and Characterization of Tunable Micromachined Filter with Double-Cavity Structure
- Iodine Solid Source Inductively Coupled Plasma Etching of InP
- Vertical and Smooth Microfabrication of InP Using Simple High-Density Plasma System with SmCo Ring Magnet
- Size Reduction of Tunable Micromachined Filters for Fast Wavelength Tuning
- Low-Temperature Dry Etching of InP by Inductively Coupled Plasma Using HI/Cl_2
- Micromachined GaAs/AlGaAs Resonant-Cavity Light Emitter with Small Temperature Dependence of Emission Wavelength
- Cl_2-based Inductively Coupled Plasma Etching of InP Using Internal Antenna
- Measurement of Plasma Density for Control of Etching Profile in Inductively Coupled Plasma Etching of InP
- Single High-Order Transverse Mode Surface Emitting Laser with Micromachined Surface Relief(Special Issue on Recent Progress of Integrated Photonic Devices)
- Emission Spectrochemical Analysis in Dry Etching Process of InP by Cl_2 Inductively Coupled Plasma
- Plasma Diagnostics in Inductively Coupled Plasma Etching Using Cl_2/Xe
- Vertical and Smooth Etching of InP by Cl_2/Xe Inductively Coupled Plasma
- Monolothic Formation of Metal Organic Chemical Vapor Deposition Grown Multi-wavelength Vertical Cavities with Highly Strained GaInAs/GaAs Quantum Wells on GaAs (311)B
- Plasma-Induced Transconductance Degradation of nMOSFET with Thin Gate Oxide
- Low Threshold GaInAsP Lasers with Semiconductor/Air Distributed Bragg Reflector Fabricated by Inductively Coupled Plasma Etching
- Heavily p-Type Doped AlAs Growth on GaAs (311)B Substrate Using Carbon Auto-Doping for Low Resistance GaAs/AlAs Distributed Bragg Reflectors
- GaInAs/AlGaInAs Semiconductor Lasers on InP Substrate with AlAs Oxide Current Confinement
- Composition Dependence of Thermal Annealing Effect on 1.3 μm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy : Semiconductors
- Inductively coupled plasma etching of silicon using solid iodine as an etching gas source (Special issue: Microprocesses and nanotechnology)
- 1.12μm PolariZation Controlled Highly Strained GalnAs Vertical-Cavity Surface-Emitting Lasers on GaAs(311)B by Metal Organic Chemical Vapor Deposition : Optics and Quantum Electronics
- Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- GaInAs/GaAs Single Mode Vertical Cavity Surface Emitting Laser (VCSEL) Array on GaAs (311) B(Special Issue on Optical Interconnects/Optical Signal Processing)
- 1.15 μm Lasing Operation of Highly Strained GaInAs/GaAs on GaAs (311)B Substrate with High Characteristic Temperature (T_0 = 210 K)
- P-type AlAs Growth on a GaAs (311)B Substrate Using Carbon Auto-Doping for Low Resistance GaAs/AlAs Distributed Bragg Reflectors
- GaInAs/AlGaInAs Semiconductor Lasers with AlAs Oxide Current Confinement Structure
- Micromachined Semiconductor Vertical Cavity for Temperature Insensitive Surface Emitting Lasers and Optical Filters
- Characterization of Sidewall Damage Induced by Reactive Ion-Beam Etching
- Reactive Ion Beam Etch of GaInAsP/InP Multilayer and Removal of Damaged Layer by Two-Step Etch
- Microfabrication of Dielectric Multilayer Reflector by Reactive Ion Etching and Characterization of Induced Wafer Damage
- Highly Stable Single Polarization Operation of GaInAs/GaAs Vertical-Cavity Surface-Emitting Laser on GaAs(311)B Substrate under High-Speed Modulation
- Vertical-Cavity Surface-Emitting Laser Array on GaAs(311)B Substrate Exhibiting Single-Transverse Mode and Stable-Polarization Operation
- AlAs Oxidation System with H_2O Vaporizer for Oxide-Confined Surface Emitting Lasers
- A Completely Single-Mode and Single-Polarization Vertical-Cavity Surface Emitting Lasers Grown on GaAs (311)B Substrate
- InGaAs/GaAs Vertical-Cavity Surface Emitting Laser on GaAs (311)B Substrate Using Carbon Auto-Doping
- Low Bias Voltage Dry Etching of InP by Inductively Coupled Plasma Using SiCl_4/Ar
- C_ Resist Mask of Electron Beam Lithography for Chlorine-Based Reactive Ion Beam Etching
- Surface Temperature Increase in Reactive Ion Beam Etch and Improvement of Profiles by Multistep Etching
- Measurement of Sidewall Roughness of InP Etched by Reactive Ion Bearn Etching