Suppressing Ion Implantation Induced Oxide Charging by Utilizing Physically Damaged Oxide Region
スポンサーリンク
概要
- 論文の詳細を見る
- 1997-03-30
著者
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Eriguchi Koji
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Eriguchi Koji
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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TAKASE Michihiko
Semiconductor Research Center, Matsushita Electric Industrial, Co., Ltd.
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MIZUNO Bunji
Semiconductor Research Center, Matsushita Electric Industrial, Co., Ltd.
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Mizuno Bunji
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Takase Michihiko
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
関連論文
- Suppressing Ion Implantation Induced Oxide Charging by Utilizing Physically Damaged Oxide Region
- Correlating Charge-to-Breakdown with Constant-Current Injection to Gate Oxide Lifetime under Constant-Voltage Stress
- Correlating Charge-to-Breakdown with Constant-Current Injection to Gate Oxide Lifetime under Constant-Voltage Stress
- Plasma-Induced Transconductance Degradation of nMOSFET with Thin Gate Oxide
- Evaluation of Plasma Damage to Gate Oxide (Special Issue on Quarter Micron Si Device and Process Technologies)
- Quantitative Evaluation of Gate Oxide Damage during Plasma Processing Using Antenna-Structure Capacitors
- Electron Paramagnetic Resonance Studies of Defects in Oxygen-Implanted Silicon