Evaluation of Plasma Damage to Gate Oxide (Special Issue on Quarter Micron Si Device and Process Technologies)
スポンサーリンク
概要
- 論文の詳細を見る
Plasma damage to gate oxide is studied using the test structures with various length antennas. It is shown that the plasma damage to gate oxide can be monitored quantitatively by measuring charge to breakdown (Q_<BD>). From the Q_<BD> measurements, it is confirmed that the degradation occurs in the duration of over-etching but not in the duration of main etching. The breakdown spots in gate oxide are detected by a photon emission method. The breakdown are caused by plasma damage at the LOCOS edge. A LOCOS structure plays an important role for the degradation by the plasma damage.
- 社団法人電子情報通信学会の論文
- 1994-03-25
著者
-
Eriguchi K
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
-
Eriguchi Koji
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
-
Eriguchi Koji
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
-
Tsuji Kazuhiko
Semiconductor Research Laboratory
-
Tsuji Kazuhiko
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
-
Uraoka Yukiharu
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
-
Tamaki Tokuhiko
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
-
Uraoka Y
Nara Inst. Of Sci. And Technol. Nara Jpn
-
Uraoka Yukiharu
Graduate School Of Materials Science Nara Institute Of Science And Technology
-
Uraoka Yukiharu
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
-
Tamaki Tokuhiko
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
-
TSUJI Kazuhiko
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
関連論文
- Investigation of Near-Interface Traps Generated by NO Direct Oxidation in C-face 4H-SiC Metal-Oxide-Semiconductor Structures
- Novel Stacked Nanodisk with Quantum Effect Fabricated by Defect-free Chlorine Neutral Beam Etching
- A New Silicon Quantum-Well Structure with Controlled Diameter and Thickness Fabricated with Ferritin Iron Core Mask and Chlorine Neutral Beam Etching
- Suppressing Ion Implantation Induced Oxide Charging by Utilizing Physically Damaged Oxide Region
- Electron Injection into Si Nanodot Fabricated by Side-Wall Plasma Enhanced Chemical Vapor Deposition
- Gate Length Dependence of Hot Carrier Reliability in Low-Temperature Polycrystatline-Silicon P-Channel Thin Film Transistors
- Low Temperature Nitridation of Si Oxide Utilizing Activated Nitrogen(Semiconductors)
- Comprehensive Study on Reliability of Low-Temperature Poly-Si Thin-Film Transistors under Dynamic Complimentary Metal-Oxide Semiconductor Operations
- Floating Gate MOS Capacitor with High-Density Nanodots Array Produced by Protein Supramolecule
- High-Density Floating Nanodots Memory Produced by Cage-Shaped Protein
- Fabrication of Defect-Free Sub-10nm Si Nanocolumn for Quantum Effect Devices Using Cl Neutral Beam Process
- Improving High-κ Gate Dielectric Properties by High-Pressure Water Vapor Annealing
- Nondestructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance
- Non-Destructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance
- Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
- Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
- NH_3 Plasma Pretreatment of 4H-SiC(0001) Surface for Reduction of Interface States in Metal-Oxide-Semiconductor Devices
- Correlating Charge-to-Breakdown with Constant-Current Injection to Gate Oxide Lifetime under Constant-Voltage Stress
- Correlating Charge-to-Breakdown with Constant-Current Injection to Gate Oxide Lifetime under Constant-Voltage Stress
- Plasma-Induced Transconductance Degradation of nMOSFET with Thin Gate Oxide
- Evaluation of Plasma Damage to Gate Oxide (Special Issue on Quarter Micron Si Device and Process Technologies)
- Quantitative Evaluation of Gate Oxide Damage during Plasma Processing Using Antenna-Structure Capacitors
- A Two-Dimensional Analysis of Hot-Carrier Photoemission from LOCOS and Trench-Isolated MOSFETs
- A 10 Bit All-Parallel A/D Converter : A-4: LSI-3 AND JUNCTION DEVICES
- Lissajous Electron Plasma (LEP) Generation for Dry Etching
- Analysis of Device Performance by Quasi Three-Dimensional Simulation for Thin Film Polycrystalline Silicon Solar Cells with Columnar Structure : Semiconductors
- Passivation Effect of Plasma Chemical Vapor Deposited SiNx on Single-Crystalline Silicon Thin-Film Solar Cells
- Thermal Etching of 4H-SiC(0001) Si Faces in the Mixed Gas of Chlorine and Oxygen
- Reliability of High-Frequency Operation of Low-Temperature Polysilicon Thin Film Transistors under Dynamic Stress
- Degradation Phenomenon under Low Drain Voltage Stress in p-channel Metal-Oxide-Semiconductor Field-Effect-Transistors
- A New Technique for Evaluating Gate Oxide Reliability Using a Photon Emission Method (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Reliability of Low-Temperature Poly-Si Thin Film Transistors with Lightly Doped Drain Structures
- Floating Gate Memory with Biomineralized Nanodots Embedded in High-$k$ Gate Dielectric
- Rear Side Passivated Monocrystalline Silicon Thin Film Solar Cells with Laser Fired Contact Process
- Low Temperature Nitridation of Si Oxide Utilizing Activated Oxygen and Nitrogen
- Electrical Properties and Thermal Stability of Cu/6H-SiC Junctions : Electrical Properties of Condensed Matter
- Three-Dimensional Nanodot-Type Floating Gate Memory Fabricated by Bio-Layer-by-Layer Method
- Polycrystalline Silicon Thin Film for Solar Cells Utilizing Aluminum Induced Crystallization Method
- Unique Phenomenon in Degradation of Amorphous In_2O_3-Ga_2O_3-ZnO Thin-Film Transistors under Dynamic Stress
- High-Pressure Water Vapor Heat Treatment for Enhancement of SiOx or SiNx Passivation Layers of Silicon Solar Cells
- Analysis of Photoelectrochemical Processes in $\alpha$-SiC Substrates with Atomically Flat Surfaces
- Evaluation of Crystallinity in 4H–SiC{0001} Epilayers Thermally Etched by Chlorine and Oxygen System
- Floating Gate Memory Based on Ferritin Nanodots with High-$k$ Gate Dielectrics
- Analysis of the Temperature Characteristics in Polycrystalline Si Solar Cells Using Modified Equivalent Circuit Model
- Floating Gate Metal–Oxide–Semiconductor Capacitor Employing Array of High-Density Nanodots Produced by Protein Supramolecule
- Floating Nanodot Gate Memory Devices Based on Biomineralized Inorganic Nanodot Array as a Storage Node
- Degradation in Low-Temperature Poly-Si Thin Film Transistors Depending on Grain Boundaries
- Evaluation of InGaP/InGaAs/Ge Triple-Junction Solar Cell under Concentrated Light by Simulation Program with Integrated Circuit Emphasis
- Effect of SiO2 Tunnel Oxide Thickness on Electron Tunneling Mechanism in Si Nanocrystal Dots Floating-Gate Memories
- Hot Carrier Effect in UltraThin Gate Oxide Metal Oxide Semiconductor Field Effect Transistor
- Analysis of Hot Carrier Effect in Low-Temperature Poly-Si Gate-Overlapped Lightly Doped Drain Thin Film Transistors
- Analysis of p–n Junction Profiles of Polycrystalline Silicon Thin-Film Solar Cells by Electron-Beam-Induced Current Technique
- Hot Carrier Effects in Low-Temperature Polysilicon Thin-Film Transistors
- Fabrication of Anodic Oxidation Films on 4H–SiC at Room Temperature Using HNO3-Based Electrolytes
- Effect of Nitrogen on Electrical and Physical Properties of Polyatomic Layer Chemical Vapor Deposition HfSixOy Gate Dielectrics
- Nucleation Control by Intermittent Supply of Dichlorosilane towards the Fabrication of Polycrystalline Silicon Thin Films with Large Grain Size