A Two-Dimensional Analysis of Hot-Carrier Photoemission from LOCOS and Trench-Isolated MOSFETs

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概要

• 論文の詳細を見る

• A two-dimensional photoemission analysis of hot-carrier effects in LOCOS-and trench-isolated CMOS devices with channel width ranging from 160 μm to 0.2 μm is described. Photoemission-intensity profiles can be measured in spatial resolution of 0.1 μm. Different photoemission characteristics are observed in n-MOSFETs depending on isolation technology; M-shaped photoemission-intensity profiles are observed as gate voltage becomes higher in trench-isolated ones, but scarcely measured in LOCOS-isolated ones. As for p-MOSFETs, similar characteristics are observed independent on isolation technology and slightly M-shaped profiles are observed at higher gate voltages. The recession of 0.1-0.2 μm in photoemission area from the gate electrode edge due to gate bias dependence of the pinch-off points of n^--LDD drain is observed when gate voltage increases from 1 V to 6 V. Meanwhile the recession of the pinch-off points in p-MOSFETs is less than 0.1 μm even when gate voltage increases from -2 V to -8 V. A qualitative explanation for the experimental results is given for four kinds of MOSFETs in comparing each device structure near the isolation edge.

• 社団法人電子情報通信学会の論文
• 1993-11-25

著者

• IWATA Hideyuki

  Department of Information Systems Engineering, Toyama Prefectural University

• OHZONE Takashi

  Department of Communication Engineering, Okayama Prefectural University

• Odanaka Shinji

  Semiconductor Research Center Matsushita Electric Ind.co.

• Odanaka Shinji

  Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.

• Ohzone Takashi

  Department Of Communication Engineering Okayama Prefectural University

• Iwata Hideyuki

  Department Of Electronics And Informatics Toyama Prefectural University

• Uraoka Yukiharu

  Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.

• Uraoka Yukiharu

  Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.

• Ohzone Takashi

  Department of Electronics and Informatics, Toyama Prefectural University

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