Correlating Charge-to-Breakdown with Constant-Current Injection to Gate Oxide Lifetime under Constant-Voltage Stress

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概要

• 論文の詳細を見る
• 1996-02-01

著者

• Eriguchi Koji

  Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.

• Eriguchi Koji

  Semiconductor Research Center Matsushita Electric Ind.co. Ltd.

• URAOKA Yukiharu

  Liquid Crystal Display Development Center, Matsushita Electric Ind. Co., Ltd.

関連論文

• Suppressing Ion Implantation Induced Oxide Charging by Utilizing Physically Damaged Oxide Region
• Correlating Charge-to-Breakdown with Constant-Current Injection to Gate Oxide Lifetime under Constant-Voltage Stress
• Correlating Charge-to-Breakdown with Constant-Current Injection to Gate Oxide Lifetime under Constant-Voltage Stress
• Plasma-Induced Transconductance Degradation of nMOSFET with Thin Gate Oxide
• Evaluation of Plasma Damage to Gate Oxide (Special Issue on Quarter Micron Si Device and Process Technologies)
• Quantitative Evaluation of Gate Oxide Damage during Plasma Processing Using Antenna-Structure Capacitors

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