Rear Side Passivated Monocrystalline Silicon Thin Film Solar Cells with Laser Fired Contact Process

概要

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Monocrystalline silicon (c-Si) thin film solar cells based on transfer technique are promising for reduction of silicon material consumption and cost. In this paper, we present the rear passivated type 15-μm-thick c-Si thin film solar cells using the laser fired contact (LFC). After separation, the rear side process using transfer technique is maintained at below 200 °C. We applied NH3 plasma-treatment technique before SiNx deposition and LFC technique that fire through rear contact and passivation layers using laser irradiation to the rear surface of c-Si thin film solar cells. As a result, in the solar cell performance, $V_{\text{OC}}$ of 533 and 553 mV have been achieved for the rear non-passivated cell and the rear SiNx passivated cell, respectively. The rear surface passivation using NH3 plasma-treatment has an effect on the increasing of $V_{\text{OC}}$. For the internal quantum efficiency (IQE) results, the rear SiNx passivated cell increased by over 15% compared to the rear non-passivated cell in the long wavelength region. The high potential of rear passivated c-Si thin film solar cells have been illustrated in this study.
Japan Society of Applied Physicsの論文
2008-08-25