T1602-3-1 MEMS用Si薄膜材料の内部応力増強に向けたNiフェリチンを用いた金属誘起横方向結晶成長([T1602-3]マイクロナノ理工学:nmからmmまでの表面制御とその応用(3))

概要

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Controlling the stress in Si film structure is one of the critical issues for MEMS devices. Rotation angle of micromirror devices can be expanded by increasing tensile stress in Si thin film torsion bars which suspend the micromirror. Thus far, crystallization-induced stress is used to generate tensile stress in the Si film structures. Since the tensile stress is generated by the volume shrinkage of the Si film during the crystallization, larger crystallized grains is necessary to achieve the larger tensile stress. Here, we investigated metal-induced lateral crystallization (MILC) using Ni nanoparticles (φ7nm) synthesized within ferritin supuramolecules. The Ni nanoparticles adsorbed on the Si film work to enhance the crystallization process thorough silicidation phenomena where the activation energy is lower than silicon crystallization. The grain size increased from 1μm to 20〜30μm. The tensile stress increased from 90MPato 205MPa.
一般社団法人日本機械学会の論文
2010-09-04