Electron Paramagnetic Resonance Studies of Defects in Oxygen-Implanted Silicon
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概要
- 論文の詳細を見る
Electron paramagnetic resonance measurements have been carried out on oxygen-implanted silicon at room temperatures. The EPR spectra composed of three isotropic lines are observed for the ion-dose range between 2×10^<17> and 1.8×10^<18> cm^<-2>. They are ascribed to the dangling bonds in amorphous Si, to the defects in SiO_2 and to defects at the Si/SiO_2 interface. The EPR spectra ascribed to the defects in the Si/SiO_2 interface are found to differ from those arising from the Pb centre and from the defects at the Si/SiO_2 interface formed by oxygen ion implantation at high temperature.
- 社団法人応用物理学会の論文
- 1987-07-20
著者
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Fujita Tetsuo
Department Of Physics Nagoya University
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Fujita Tetsuo
Department Of Physics Faculty Of Science Nagoya University
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ITOH Noriaki
Department of Physics, Faculty of Science, Nagoya University
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Fujita Tetsuo
Department Of Electronic Engineering Shizuoka Institute Of Science And Technology
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Itoh Noriaki
Department Of Crystalline Materials Science Faculty Of Engineering Nagoya University
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Itoh Noriaki
Department Of Physics Faculty Of Science Nagoya University
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KUBOTA Masafumi
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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MIZUNO Bunji
Semiconductor Research Center, Matsushita Electric Industrial, Co., Ltd.
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SAITOH Yasunobu
Department of Physics, Faculty of Science, Nagoya University
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Mizuno Bunji
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Kubota Masafumi
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Itoh Noriaki
Department Of Crystalline Material Science Faculty Of Engineering Nagoya University
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Saitoh Yasunobu
Department Of Physics Faculty Of Science Nagoya University
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Fujita Tetsuo
Department of Applied Chemistry, Faculty of Engineering, Osaka University
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