F-Center Formation at Highly Excited Triplet States of Self-Trapped Excitons in KCl
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概要
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Measurements have been made of the creation of the F centers by the opticalexcitation of the self-trapped excitons with a Ijght pulse from a tunable dye laser.It is found that the ratio of the 7'-center conct:ntration created by the light pulseto the triplet exciton concentration at the inciclence of the light pulse depends onthe integrated photon flux 0 as o{1 -exp ( -#<))}, where a and b are constants.Kinetic models are developed for treating flue non-radiative processes of thehighly excited self-trapped exciton, and the<sfficiency of the 7'-center creationfrom the highly excited triplet exciton was determined using the experimentallyobtained parameters a and b. It is found that the efficiency is almost constantbetween 1.77 and 2.08 eV above the lowest triplet exciton and becomes higherabove 2.58 eV. The dependence of the efficienczy on energy is discussed in termsof existing models of the defect formation.
- 社団法人日本物理学会の論文
- 1980-05-15
著者
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Soda Kazuo
Department Of Crystalline Material Science Faculty Of Engineering Nagoya University
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Itoh Noriaki
Department Of Crystalline Material Science Faculty Of Engineering Nagoya University
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