Defects in Cadmium Selenide Single Crystals
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概要
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Effects of lattice defects produced by electron irradiations and firing in Cd vapor on the photoelectric properties of CdSe have been investigated. The magnitude of persistent photoconductivity, that is, the increment of conductivity which is persistent in dark for many hours following photoexcitation at low temperature, increases by firing in Cd vapor and decreases by firing in Se_2 vapor. The persistent photoconductivity decays, as the temperature is increased, with the activation energy of 0.26 eV. Persistent photoconductivity is also produced by electron irradiation. It is considered that the persistent photoconductivity is induced by a lattice defect produced either by firing in Cd atmosphere and by electron irradiation. The threshold energy for production of the defects by electron irradiation is obtained and shown to be 270±30 key. These defects are annealed out at 350°K. The activation energy of annealing is about 1.25 eV and frequency factor is 4×10^<13> sec^<-1>. It is concluded that the defects responsible for the persistent photoconductivity is the Se vacancy which acts as a double acceptor.
- 1970-10-05
著者
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ITOH Noriaki
Department of Physics, Faculty of Science, Nagoya University
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KAWAMOTO Hiroshi
Department of Applied Chemistry, Faculty of Engineering, Gunma University
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Itoh Noriaki
Department Of Nuclear Engineering Nagoya University
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Itoh Noriaki
Department Of Crystalline Materials Science Faculty Of Engineering Nagoya University
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SUITA Tokuo
Department of Nuclear Engineering, College of Engineering, Osaka University
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Suita Tokuo
Department Of Atomic Energy Engineering Faculty Of Engineering Osaka University
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MATSUURA Koichi
Department of Electronics, Faculty of Engineering, Tottori University
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Matsuura Koichi
Department Of Atomic Energy Engineering Faculty Of Engineering Osaka University:(present Address) De
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Itoh Noriaki
Department Of Crystalline Material Science Faculty Of Engineering Nagoya University
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Kawamoto Hiroshi
Department Of Applied Chemistry Faculty Of Technology Gunma University
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Kawamoto Hiroshi
Department Of Atomic Energy Engineering Faculty Of Engineering Osaka University:(present Address) Ja
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Kawamoto Hiroshi
Department Of Applied Chemistry Faculty Of Engineering Gunma University
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