De-Excitation Pathways of Highly-Excited Self-Trapped Exciton and Electron Plus Self-Trapped Hole
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概要
- 論文の詳細を見る
The yield of F-H pairs in KBr upon photo-excitation of the electron of theself-trapped excitons to n>3 orbitals is found to be much lower than that uponphotoexcitation to the n=2 orbitals and than the overall yield of the F centersunder ionizing radiation. The results imply that the de-excitation pathways ofexcited self-trapped excitons and the electron trapped by the self-trapped holesare different.
- 社団法人日本物理学会の論文
- 1983-06-15
著者
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ITOH Noriaki
Department of Physics, Faculty of Science, Nagoya University
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Itoh Noriaki
Department Of Crystalline Materials Science Faculty Of Engineering Nagoya University
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Itoh Noriaki
Department Of Crystalline Materials Science Faculty Of Engineering Nagoya University:department Of P
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TANIMURA Katsumi
Department of Physics,Faculty of Science,Nagoya University
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Tanimura Katsumi
Department Of Crystalline Materials Science Faculty Of Engineering Nagoya University
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Tanimura Katsumi
Department Of Crystalline Materials Science Faculty Of Engineering Nagoya University:department Of P
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MIZUNO Bunji
Department of Crystalline Materials Science,Faculty of Engineering,Nagoya University
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Mizuno Bunji
Department Of Crystalline Materials Science Faculty Of Engineering Nagoya University:semlconductor R
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Itoh Noriaki
Department Of Crystalline Material Science Faculty Of Engineering Nagoya University
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