Enhancement of Emission of Si Atoms from Si(100) Surface by Low-Rate Br Exposure : A New Model of Dry Etching Based on Defect-Adsorbate Interaction

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-04-30

著者

• Itoh N

  Institute Of Advanced Material Study And Department Of Molecular Science And Technology Graduate Sch

• ITOH Noriaki

  Department of Physics, Faculty of Science, Nagoya University

• Itoh N

  National Aerospace Lab. Tokyo

• Itoh Noriaki

  Department Of Crystalline Materials Science Faculty Of Engineering Nagoya University

• YU In

  Department of Physics, Nagoya University

• NAKAI Yasuo

  Department of Physics, Nagoya University

• Yu In

  Department Of Physics Nagoya University

• Nakai Y

  Kyocera Corp. Kagoshima Jpn

• Nakai Yasuo

  Department Of Physics Nagoya University

• Itoh Noriaki

  Department Of Crystalline Material Science Faculty Of Engineering Nagoya University

• Itoh Noriaki

  Department of Physics,Faculty of Science,Nagoya University

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• Limitation of Nitrogen Incorporation into the Hydrogenated Amorphous Carbon Nitride Films Formed from the Dissociative Excitation Reaction of CH_3CN
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