Nakai Y | Kyocera Corp. Kagoshima Jpn
スポンサーリンク
概要
関連著者
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Nakai Y
Kyocera Corp. Kagoshima Jpn
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Nakai Y
Shizuoka Inst. Sci. And Technol. Shizuoka
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Itoh N
Institute Of Advanced Material Study And Department Of Molecular Science And Technology Graduate Sch
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ITOH Noriaki
Department of Physics, Faculty of Science, Nagoya University
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Nakai Y
Tohoku Univ. Sendai‐shi Jpn
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Itoh N
National Aerospace Lab. Tokyo
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Itoh Noriaki
Department Of Crystalline Materials Science Faculty Of Engineering Nagoya University
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Nishimoto Y
Semiconductor Process Laboratory Co. Ltd.
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TAKAMATSU Hiroyuki
Electronics Research Laboratory, Kobe Steel Ltd.
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NISHIMOTO Yoshiro
Electronics Research Laboratory, Kobe Steel Ltd.
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YU In
Department of Physics, Nagoya University
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NAKAI Yasuo
Department of Physics, Nagoya University
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Nakai Yasuhide
Leo Corporation
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Yu In
Department Of Physics Nagoya University
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Nakai Yasuo
Department Of Physics Nagoya University
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Itoh Noriaki
Department Of Crystalline Material Science Faculty Of Engineering Nagoya University
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Takamatsu Hiroyuki
Electronics Research Laboratory Kobe Steel Ltd.
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Takamatsu H
Kobe Steel Ltd. Kobe Jpn
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Itoh Noriaki
Department of Physics,Faculty of Science,Nagoya University
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HARA Tohru
Electrical Engineering, Hosei University
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Hara Tohru
Electrical Engineering Hosei University
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WASHIDZU Gen
Electrical Engineering, Hosei University Koganei
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Washidzu Gen
Electrical Engineering Hosei University
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Sumie S
Kobelco Res. Inst. Kobe Jpn
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Sumie Shingo
Electronics Research Laboratory Kobe Steel Ltd.
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Ichikawa Ryuji
Electrical Engineering, Hosei University
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Hashizume Hidehisa
Leo Corporation
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Miyoshi Tsunemichi
Leo Corporation
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Ichikawa Ryuji
Electrical Engineering Hosei University
著作論文
- High-pressure neutron diffraction study of the orientational and reversible phase transition in RbCl (Selected papers related to neutron diffraction studies by the use of KUR-TAS)
- High-pressure cell for neutron scattering (Selected papers related to neutron diffraction studies by the use of KUR-TAS)
- Enhancement of Emission of Si Atoms from Si(100) Surface by Low-Rate Br Exposure : A New Model of Dry Etching Based on Defect-Adsorbate Interaction
- Laser-Induced Electronic Emissions of Si Atoms from Si(100) Surfaces
- Dose and Damage Measurements in Low Dose Ion Implantation in Silicon by Photo-Acoustic Displacement and Minority Carrier Lifetime
- Photodisplacement Measurement by Interferometric Laser Probe