Dose and Damage Measurements in Low Dose Ion Implantation in Silicon by Photo-Acoustic Displacement and Minority Carrier Lifetime

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Reflow of PSG Layers by Halogen Lamp Short Duration Heating Technique
Low Resistance Al/Si Ohmic Contacts on Boron Implanted Shallow p^+ Si Layers Formed by Halogen Lamp Annealing
Contact Resistance of Al/Si Ohmic Electrodes Formed by Rapid Lamp Sintering.
High-pressure neutron diffraction study of the orientational and reversible phase transition in RbCl (Selected papers related to neutron diffraction studies by the use of KUR-TAS)
High-pressure cell for neutron scattering (Selected papers related to neutron diffraction studies by the use of KUR-TAS)
Damage Formed by Si^+ Implantation in GaAs
Rapid Heating Reflow of Phosphosilicate Glass Enhanced by As Ion Implantation
Barrier Effects of Tungsten Infer-Layer for Aluminum Diffusion in Aluminum/Silicon Ohmic-Contact System
Properties of Titanium Layers Deposited by Collimation Sputtering
Stress in Al-Sc Interconnection Layers
Silicidation Reaction and Stress in Ti/Si
Formation of Titanium Nitride/Titanium Silicide by High Pressure Nitridation in Titanium/Silicon
Properties of Titanium Nitride Films for Barrier Metal in Aluminum Ohmic Contact Systems
Damage Formed on Silicon Surface by Helicon Wave Plasma Etching
Barrier Properties for Oxygen Diffusion in a TaSiN Layer
Growth Kinetics of Hybridoma Cells in High Density Culture
Theoretical Analysis of Photoacoustic Displacement for Inhomogeneous Materials
A New Method of Photothermal Displacement Measurement by Laser Interferometric Probe : Its Mechanism and Applications to Evaluation of Lattice Damage in Semiconductors
Damage Induced by Electron Cyclotron Resonance Plasma Etching on Silicon Surface
Enhancement of Emission of Si Atoms from Si(100) Surface by Low-Rate Br Exposure : A New Model of Dry Etching Based on Defect-Adsorbate Interaction
Laser-Induced Electronic Emissions of Si Atoms from Si(100) Surfaces
A Highly Accurate Laser-Sectioning Method for In-Motion Railway Inspection (Special Section on Machine Vision Applications)
Dose and Damage Measurements in Low Dose Ion Implantation in Silicon by Photo-Acoustic Displacement and Minority Carrier Lifetime
Photodisplacement Measurement by Interferometric Laser Probe
Measurement of the Delamination of Thin Silicon and Silicon Carbide Layers by the Multi-Wavelength Laser Ellipsometer
Carbon Ion Implantation in GaAs
Thermal Stability in Al/Ti/GaAs Schottky Barrier
Damage Formed by Plasma Boron Doping in Silicon
Thermal Stability and Interfacial Reaction of Barrier Layers with Low-Dielectric-Constant Fluorinated Carbon Interlayer
Interfacial Reaction in Polycide MOS Gate Structure Employing CVD Tungsten Silicide
Capless Rapid Thermal Annealing of Silicon Ion Implanted Gallium Arsenide
Evaluation of Parameters in Atmospheric-Pressure Chemical Vapor Deposition of Borophosphosilicate Glass Using Tetraethylorthosilicate and Ozone : Semiconductors
Morphology Evolution of SiO_2 Films Deposited by Tetraethylorthosilicate/O_3 Atmospheric-Pressure Chemical Vapor Deposition on Thermal SiO_2
Low-Temperature Atmospheric-Pressure Chemical Vapor Deposition Using 2, 4, 6, 8-Tetramethylcyclotetrasiloxane and Ozone
Effects of Ambient Gas and Temperature on Photo-Acoustic Displacement for Semiconductors
Carrier Lifetime Measurements by Microwave Photoconductive Decay Method at Low Injection Levels
Resistivity of Thin Copper Interconnection Layers
Damage Depth Profiles in Jon-Implanted Silicon by the Photoacoustic Displacement Technique

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