Low-Temperature Atmospheric-Pressure Chemical Vapor Deposition Using 2, 4, 6, 8-Tetramethylcyclotetrasiloxane and Ozone
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概要
- 論文の詳細を見る
Tetramethylcyclotetrasiloxane (TMCTS) was studied as a possible silicon source for atmospheric-pressure chemical vapor deposition (CVD) using ozone chemistry. High-quality silicon dioxide films were produced at 400℃ with a typical deposition rate of 100 nm/min. During the study, TMCTS was observed to have base material dependent characteristics which varied as a function of both deposition temperature and ozone concentration. The deposition rate vs deposition temperature relationship indicated that the film structure varies slightly as a function of the deposition temperature. Data collected for film shrinkage after annealing supported these structural changes. The typical as-deposited film stress was 2×10^9 dyn/cm^2 (tensile). The step coverage varied from conformal to flow-shaped depending on the deposition temperature and ozone concentration. The results of this study show that TMCTS is a promising precursor for use in intermetal dielectric applications for ultra large-scale integration (ULSI) devices.
- 社団法人応用物理学会の論文
- 1994-04-15
著者
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Maeda Kohji
Department Of Physics Engineering Mie University
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MAEDA Kazuo
Semiconductor Process Laboratory Co., Ltd.
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Maeda K
Semiconductor Process Laboratory Co. Ltd.
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Nishimoto Y
Semiconductor Process Laboratory Co. Ltd.
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Nishimoto Yuko
Kanagawa University Department Of Chemistry
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Nishimoto Yuko
Semiconductor Process Laboratory Co. Ltd.
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TOKUMASU Noboru
Semiconductor Process Laboratory Co., Ltd.
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FUJINO Katsuhiro
Semiconductor Process Laboratory
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Maeda Kazuo
Semiconductor Division Fujitsu Ltd.
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Maeda Kazuo
Semiconductor Division Fujitsu Limited
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Tokumasu N
Semiconductor Process Laboratory Co. Ltd.
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Tokumasu Noboru
Semiconductor Process Laboratory Co. Ltd.
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Fujino K
Semiconductor Process Laboratory
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