Analysis of Si Schottky Barrier Characteristics Based on a New Interfacial Layer Model
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概要
- 論文の詳細を見る
Current-voltage characteristics of Si Schottky barrier diodes are measured at various temperatures between 300 K and 420 K in order to investigate an applicability of a newly proposed interfacial layer model for Schottky barrier. Experimental data are analyzed on a basis of this model. Analyzed results are mostly found to be similar to those of a-Si:H and can be interpreted by the present model. The new interfacial layer model is then concluded to well represent actual Schottky barriers for both amorphous and crystalline semiconductors.
- 社団法人応用物理学会の論文
- 1991-01-15
著者
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Ikoma Hideaki
Faculty Of Science And Technology Science University Of Tokyo
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Maeda Kohji
Department Of Physics Engineering Mie University
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Maeda K
Semiconductor Process Laboratory Co. Ltd.
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Maeda Keiji
Faculty Of Industrial Science And Technology Science University Of Tokyo
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Maeda Kazuo
Semiconductor Division Fujitsu Ltd.
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